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WaferChek™
In-situ Process Monitoring 
WaferChek
in-situ monitoring uses color CCD detection of surface
property changes as a measure of process progress and
completion, providing more reliable control than timing,
thresholding, or rate-of-change determination. It allows
automatic adjustment of the process on a wafer-at-a-time
basis, improving wafer-to-wafer uniformity while reducing
chemistry consumption and disposal. Data for management
and process tracking is captured, along with a video file
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Silicon Oxide
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Aluminum |


Nickel
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Structured Wafer Etch Processing
For single sided etching—active, backside, or bevel, SSEC’s gas seal spindle tooling completely protects one side of the wafer from any fluids or vapors. The wafer floats on a 100 µm gas cushion with filter within the spindle tool. The wafer is held in place through centrifugal force with locating pins. Programmable lifting enables automation with vacuum or edge grip handling.
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High Flow Dispense
Particularly suitable for etching and cleaning, a programmable high flow stream dispense can apply up to 3,000 ml per minute of ambient or heated chemistry. Flow rate, nozzle height, and arm motion profile and speed are fully PC programmable by individual process step. Combination dispense systems with high flow stream and spray dispensing are available as standard.
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Combination 200/300 mm Gas Seal Tooling
For single-sided etching where the backside of the wafer is completely protected against chemistry or vapor, SSEC offers a combination gas seal spindle tool for 200 mm and 300 mm wafers. With SSEC’s integrated vision/robotic system, changing a wafer size involves only a cassette or FOUP change and PC recipe change. There is no hardware changeover, providing for the highest rate of equipment utilization. |
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Backside and Bevel Edge Cleaning
Bevel
etch control for 300 mm wafers allows oxide, nitride, poly silicon, and
copper removal from backside and bevel exclusion zone. Proprietary spindle tooling enables specific bevel and side edge etching, independent of the wafer backside using a simple, mechanically determined etching area. This capability includes programmable flow rate for the bevel etch and the ability for DI rinse of the bevel area. The process can be used for all wafer sizes, including notched and flat wafers, with bevel 0.8-5 mm.
Bevel
etch control for 300 mm wafers allows oxide, nitride, poly silicon, and
copper removal from backside and bevel exclusion zone. Proprietary
tooling design provides a backside nitrogen flow that protects the dry,
active area of the wafer.
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PC Programmable Chemical Blending
The
chemical blending system allows reduced chemistry usage, consuming only
the amount actually needed for each wafer. Single pass or recirculated
chemistry is blended according to recipe under PC control. Chemistry is
transported with vacuum and pressure drive, with automatic tank washout
and dry between blends.
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PC Programmable Temperature Control
On-the-fly
temperature control on a true, non-batch basis is achieved through use
of programmable heaters. PFA and quartz heaters are provided for acids,
bases, and DI water solutions. Solvent heaters have polished stainless
steel inside surfaces. Processors also feature PFA heat exchangers with
Thermo Neslab heater/chillers.
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Immersion Solvent Processing
A
batch immersion station complements single wafer processing
to give the best of both technologies, speeding subsequent
single wafer stripping and reducing the chemistry usage
and force of spray processing. Soaking in ambient, heated,
fresh, or recirculated solvents, under control of exclusive
“Equal Soak Time” and "scheduling"
software, optimizes processing and ensures uniform results
and maximum chamber usage. The immersion process includes
wafer agitation, cascade solvent overflow, and a nitrogen
blanket environment, with sealed door, to reduce moisture
absorption into solvents for corrosion-free processing
and lowest costs.
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